1. Light emitting diodea) emits light when forward biasedb) Is made from semiconducting compound gallium arsenidec) is made of one of the two basic semi conducting material Si and Ged) emits light when reverse biased2. When a p-n junction is reverse biaseda) The depletion layer widened compared to its normal unbaised thicknessb) The current flowing in circuit is due to minority charge carrierc) The current inc. slightly with an increase in applied reverse bias voltage but shows a sudden sharp increase as the applied bias voltage reaches a particular value characteristic of dioded) The current is due to majority charge carriers and increase with applied bias voltage in a non-linear way.

Radhika Batra , 10 Years ago

Grade 11