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mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. if for an n type semiconductor the density of electrons is 1019 m-3 and their mobility is 1.6 m2/(V.s) then the resistivity of the semiconductoris close to? (ignore the contribution of holes) 2 ohm m 4ohm m 0.4 ohm m 0.2 ohm mplz explain also

AD , 4 Years ago
Grade 12th pass
anser 2 Answers
Saurabh Koranglekar

Last Activity: 4 Years ago

576-367_IMG_20200502_111733.jpg

Vikas TU

Last Activity: 4 Years ago

For intrinsic semiconductors (no impurities), the number of electrons will be equal to the number of holes. 
So  ne=nh=ni 
 sigma =ni e (mu{e}+ mu{h} )
 
For N-type semiconductor electrons are majority carriers .
Conductivity sigma =  ne* mu
Resistivity (rho) = {1}/sigma} = {1}/{ne*e*mu}

= 0.4 Ohm m

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